2SCR542F3 数据手册 ( 数据表 ) - ROHM Semiconductor
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ROHM Semiconductor
Features
1) Suitable for Middle Power Driver.
2) Low VCE(sat)
VCE(sat)=200mV(Max.).
(IC/IB=1A/50mA)
3) High collector current.
IC=3A(max),ICP=6A(max)
4) Leadless small SMD package (HUML2020L3)
Excellent thermal and electrical conductivity.
APPLICATION
LOW FREQUENCY AMPLIFIER
PNP -3.0A -30V Middle Power Transistor ( Rev : 2014 )
ROHM Semiconductor
PNP -3.0A -30V Middle Power Transistor
ROHM Semiconductor
PNP -3.0A -30V Middle Power Transistor ( Rev : 2019 )
ROHM Semiconductor
PNP -3.0A -30V Middle Power Transistor ( Rev : 2015 )
ROHM Semiconductor
NPN 3.0A 50V Middle Power Transistor
ROHM Semiconductor
NPN 3.0A 50V Middle Power Transistor ( Rev : 2013 )
ROHM Semiconductor
NPN 3.0A 50V Middle Power Transistor ( Rev : 2013 )
ROHM Semiconductor
NPN 3.0A 50V Middle Power Transistor
ROHM Semiconductor
NPN 3.0A 50V Middle Power Transistor
ROHM Semiconductor
NPN 6A 30V Middle Power Transistor
ROHM Semiconductor