2SC5409 数据手册 ( 数据表 ) - NEC => Renesas Technology
生产厂家

NEC => Renesas Technology
FEATURE
• High fT
16 GHz TYP.
• High gain
|S21e|2 = 14 dB TYP.
@f = 2 GHz, VCE = 2 V, IC = 20 mA
• NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA
• 6-pin Small Mini Mold Package
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
New Jersey Semiconductor
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
eleflow technologies co., ltd.
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
NEC => Renesas Technology
NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION
Renesas Electronics