零件编号
2SC5193
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12 Pages
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42.9 kB
生产厂家
NEC => Renesas Technology
2SC5193 数据手册 ( 数据表 ) - NEC => Renesas Technology
NEC => Renesas Technology
FEATURES
• Low Voltage Operation, Low Phase Distortion
• Low Noise
NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
IC = 100 mA
• Compact Mini Mold Package
EIAJ: SC-70
零件编号
产品描述 (功能)
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生产厂家
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
California Eastern Laboratories.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
California Eastern Laboratories.
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