零件编号
2SC5186
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no available.
PDF
page
12 Pages
File Size
44.8 kB
生产厂家
NEC => Renesas Technology
2SC5186 数据手册 ( 数据表 ) - NEC => Renesas Technology
NEC => Renesas Technology
FEATURES
• Low Noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Ultra Super Mini-Mold package
零件编号
产品描述 (功能)
视图
生产厂家
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
NEC => Renesas Technology
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