2SC4497(2003) 数据手册 ( 数据表 ) - Toshiba
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High Voltage Control Applications
• High voltage: VCBO = 300 V, VCEO = 300 V
• Low saturation voltage: VCE (sat) = 0.5 V (max)
• Small collector output capacitance: Cob = 3 pF (typ.)
• Complementary to 2SA1721
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba