零件编号
2SC4409
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Toshiba
2SC4409(2004) 数据手册 ( 数据表 ) - Toshiba
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Power Amplifier Applications
Power switching applications
• Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A)
• High speed switching time: tstg = 500ns (typ.)
• Small flat package
• PC = 1~2 W (Mounted on a ceramic substrate)
• Complementary to 2SA1681
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
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