2SC4303 数据手册 ( 数据表 ) - New Jersey Semiconductor
生产厂家
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
• High Switching Speed
APPLICATIONS
• Designed for horizontal deflection output applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
