零件编号
2SC3622
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NEC => Renesas Technology
2SC3622 数据手册 ( 数据表 ) - NEC => Renesas Technology
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING
FEATURES
• High hFE:
hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA
• Low VCE(sat):
VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA
• High VEBO:
VEBO: 12 V (2SC3622)
VEBO: 15 V (2SC3622A)
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