零件编号
2SC3587
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NEC => Renesas Technology
2SC3587 数据手册 ( 数据表 ) - NEC => Renesas Technology
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.
FEATURES
• Low noise : NF = 1.7 dB TYP. @ f = 2 GHz
NF = 2.6 dB TYP. @ f = 4 GHz
• High power gain : GA = 12.5 dB TYP. @ f = 2 GHz
GA = 8.0 dB TYP. @ f = 4 GHz
零件编号
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生产厂家
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
New Jersey Semiconductor
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
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NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
NEC => Renesas Technology
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