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2SC3357RF 数据手册 ( 数据表 ) - NEC => Renesas Technology

2SC3357 image

零件编号
2SC3357RF

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page
8 Pages

File Size
75.8 kB

生产厂家
NEC
NEC => Renesas Technology 

DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.


FEATURES
• Low Noise and High Gain
  NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC= 7 mA, f = 1.0 GHz
  NF = 1.8 dB TYP., Ga= 9.0 dB TYP. @VCE= 10 V, IC= 40 mA, f = 1.0 GHz
• Large PTin Small Package
  PT: 2 W with 16 cm2 × 0.7 mm Ceramic Substrate.


零件编号
产品描述 (功能)
视图
生产厂家
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
PDF
Renesas Electronics

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