2SC3357RF 数据手册 ( 数据表 ) - NEC => Renesas Technology
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NEC => Renesas Technology
DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC= 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga= 9.0 dB TYP. @VCE= 10 V, IC= 40 mA, f = 1.0 GHz
• Large PTin Small Package
PT: 2 W with 16 cm2 × 0.7 mm Ceramic Substrate.
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics