2SC3025 数据手册 ( 数据表 ) - New Jersey Semiconductor
生产厂家

New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
• Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ lc= 5A
APPLICATIONS
• Designed for high-voltage power switching character display
horizontal deflection output applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor