2SC3022 数据手册 ( 数据表 ) - New Jersey Semiconductor
生产厂家
New Jersey Semiconductor
DESCRIPTION
2SC3022 is a silicon NPN epitaxial planar type transistor specifically designed for UHF high power amplifier applications.
APPLICATION
For output stage of 15 W power amplifiers in UHF band.
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
Mitsumi
NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)
Mitsumi
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
Mitsumi
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
Mitsumi
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
Mitsumi
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC
