零件编号
2SC2579
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New Jersey Semiconductor
2SC2579 数据手册 ( 数据表 ) - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
V(BR)CEo= 120V(Min)
• Good Linearity of hFE
• High Power Dissipation
APPLICATIONS
• Designed for audio power amplifier applications
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