零件编号
2SC2459
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Toshiba
2SC2459(1996) 数据手册 ( 数据表 ) - Toshiba
Toshiba
AUDIO AMPLIFIER APPLICATIONS
• High Breakdown Voltage: VCEO = 120 V (Max.)
• High DC Current Gain: hFE = 200~700
• Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (Typ.)
• Low Noise: NF = 1dB (Typ.), 10dB (Max.)
• Complementary to 2SA1049.
• Small Package.
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
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