2SC2309 数据手册 ( 数据表 ) - Renesas Electronics
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Renesas Electronics
* Collector to base voltage VCBO = 55 V
* Collector to emitter voltage VCEO = 50 V
* Emitter to base voltage VEBO 5V Collector current IC = 100 mA
* Collector power dissipation PC = 200 mW
* Junction temperature Tj = 150 °C
* Storage temperature Tstg = –55 to +150 °C
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Silicon NPN Epitaxial
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial
Renesas Electronics
Silicon NPN Epitaxial
Renesas Electronics
Silicon NPN Epitaxial
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial
KEXIN Industrial
Silicon NPN Epitaxial
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial
KEXIN Industrial
Silicon NPN Epitaxial
Renesas Electronics
Silicon NPN Epitaxial
KEXIN Industrial