零件编号
2SC1969
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New Jersey Semiconductor
2SC1969 数据手册 ( 数据表 ) - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• High Power Gain-
: Gpe ≥ 12dB,f= 27MHz, P0= 16W
• High Reliability
APPLICATIONS
• Designed for 10-14 watts output power class AB amplifiers
applications in HF band.
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