2SC1623 数据手册 ( 数据表 ) - Renesas Electronics
生产厂家
Renesas Electronics
FEATURES
• High DC Current Gain:
hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA)
• High Voltage: VCEO = 50 V
NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
