2SB989 数据手册 ( 数据表 ) - Inchange Semiconductor
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Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
• Collector Power Dissipation-
: PC= 30W@ TC= 25℃
• Low Collector Saturation Voltage-
: VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A)
• Complement to Type 2SD1352
APPLICATIONS
• Designed for general purpose applications.
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Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
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