2SB887 数据手册 ( 数据表 ) - New Jersey Semiconductor
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New Jersey Semiconductor
DESCRIPTION
• High DC Current Gain-
: hFE=1500(Min)@lc=-5A
• Wide Area of Safe Operation
• Low Collector-Emitter Saturation Voltage-
:VCE(sat)=-1.5V(Max)@lc=-5A
• Complement to Type 2SD1197
APPLICATIONS
• Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulators applications.
Silicon PNP Darlington PowerTransistor
New Jersey Semiconductor
Silicon PNP Darlington PowerTransistor
New Jersey Semiconductor
Silicon PNP Darlington PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor