2SB737 数据手册 ( 数据表 ) - New Jersey Semiconductor
生产厂家
New Jersey Semiconductor
Features
1) Ultra-low noise. (Excellent noise response at low Rg):
NF=2.5dBTyp.
(at f=10Hz. Ra=10Ω, VCE=-6V,
lc=-3mA)
2) Low base resistance: rbD=-2Ω
3) Low voltage noise: en*0.55nV/VHz
(at l0Hz, 10mA)
4) Complementary pair with 2SD786
Epitaxial Planar NPN Silicon Transistor Low rbb Low Noise Amp
New Jersey Semiconductor
PNP HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR
Micro Electronics
MINIATURE PNP AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR
Micro Electronics
Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor
ROHM Semiconductor
NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR
Micro Electronics
PNP SILICON LOW NOISE TRANSISTOR ( Rev : 2004 )
Central Semiconductor
Low Noise Transistor PNP Silicon
ON Semiconductor
MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR
New Jersey Semiconductor
MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR
Micro Electronics
NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR
Micro Electronics
