零件编号
2SB695
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New Jersey Semiconductor
2SB695 数据手册 ( 数据表 ) - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SD731
APPLICATIONS
• Designed for power amplifier and general purpose applications.
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