2SB1565 数据手册 ( 数据表 ) - New Jersey Semiconductor
生产厂家

New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V<0RlC(-o= -60V(Mm)
• Collector Power Dissipation-
: Pc 25 W@ Tc= 25T
• Low Collector Saturation Voltage
• Wide Area of Safe Operation
APPLICATIONS
• Designed for power amplifications.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor