2SB1481 数据手册 ( 数据表 ) - New Jersey Semiconductor
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)cEo=-100V(Min)
• High DC Current Gain-
: hFE= 2000(Min)@ (VCE= -2V, lc= -1.5A)
• Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@ (lc= -3A, IB= -6mA)
• Complement to Type 2SD2241
APPLICATIONS
• High power switching applications.
• Hammer drive, pulse motor drive applications,
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor