2SB1383 数据手册 ( 数据表 ) - New Jersey Semiconductor
生产厂家
New Jersey Semiconductor
DESCRIPTION
• High DC Current Gain
: hFE= 2000(Min.)@ lc= -12A, VCE= 24V
• High Collector-Emitter Breakdown Voltage-
:V(BR)CEO=-120V(Min)
• Complement to Type2SD2083
APPLICATIONS
• Designed for driver of solenoid, motor and general
purpose applications.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
