零件编号
2SB1075
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New Jersey Semiconductor
2SB1075 数据手册 ( 数据表 ) - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• High Collector Current -lc= -2A
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.)
• Good Linearity of hFE
• Low Collector Saturation Voltage :VCE(sat)=-1.0V(Max.)@lc=-3A
APPLICATIONS
• Designed for AF output amplifier applications.
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