2SA1759_(RevA) 数据手册 ( 数据表 ) - ROHM Semiconductor
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ROHM Semiconductor
Features
1) High breakdown voltage. (BVCEO= −400V)
2) Low saturation voltage,
typically VCE (sat)= −0.2V at IC / IB= −20mA / −2mA.
3) High switching speed, typically tf = 1µs at Ic =100mA.
4) Wide SOA (safe operating area).
5) Complements the 2SA4505.
High-voltage Switching Transistor (Telephone power supply)(-400V, -0.5A)
ROHM Semiconductor
High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A)
ROHM Semiconductor
High-voltage Switching Transistor (Telephone power supply)
ROHM Semiconductor
Power Transistor (400V, 0.1A)
ROHM Semiconductor
Power Transistor (400V, 0.1A)
ROHM Semiconductor
High-voltage Switching Transistor (−400V, −2A) ( Rev : RevA )
ROHM Semiconductor
High voltage switching transistor (400V, 2A) ( Rev : RevA )
ROHM Semiconductor
400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR
Diodes Incorporated.
High-voltage Switching Transistor (-400V, -0.5A) ( Rev : Rev_A )
ROHM Semiconductor
High voltage switching transistor (400V, 2A)
ROHM Semiconductor