2SA1727_REVA 数据手册 ( 数据表 ) - ROHM Semiconductor
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ROHM Semiconductor
Features
1) High breakdown voltage, BVCEO= -400V.
2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA.
3) High switching speed, typically tf : 1μs at IC = -100mA.
4) Wide SOA (safe operating area).
High-voltage Switching Transistor (-400V, -0.5A) ( Rev : Rev_A )
ROHM Semiconductor
High-voltage Switching Transistor (Telephone power supply)(-400V, -0.5A)
ROHM Semiconductor
High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A)
ROHM Semiconductor
Power Transistor (400V, 0.5A) ( Rev : RevA )
ROHM Semiconductor
Power Transistor(400V,0.5A)
ROHM Semiconductor
High-voltage Switching Transistor (−400V, −2A) ( Rev : RevA )
ROHM Semiconductor
High voltage switching transistor (400V, 2A) ( Rev : RevA )
ROHM Semiconductor
400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR
Diodes Incorporated.
High voltage switching transistor (400V, 2A)
ROHM Semiconductor
High-voltage Switching Transistor (−400V, −2A) ( Rev : RevB )
ROHM Semiconductor