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2SA1384 数据手册 ( 数据表 ) - Toshiba

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零件编号
2SA1384

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  1997   2011  

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High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications

• High voltage: VCBO = −300 V, VCEO = −300 V
• Low saturation voltage: VCE (sat) = −0.5 V (max)
• Small collector output capacitance: Cob = 6 pF (typ.)
• Complementary to 2SC3515
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

 

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TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
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TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) ( Rev : 1997 )
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TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
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Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
PDF
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
PDF
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
PDF
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) ( Rev : 2002 )
PDF
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
PDF
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
PDF
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) ( Rev : 1997 )
PDF
Toshiba

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