零件编号
2SA1312
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Toshiba
2SA1312(2021) 数据手册 ( 数据表 ) - Toshiba
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Audio Frequency Low Noise Amplifier Applications
• High voltage: VCEO = −120 V
• Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) h= 0.95 (typ.)
• High hFE: hFE = 200 to 700
• Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz
• Complementary to 2SC3324
• Small package
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
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Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
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