2SA1298 数据手册 ( 数据表 ) - Toshiba
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Toshiba
Low Frequency Power Amplifier Application
Power Switching Applications
• High DC current gain: hFE = 100 to 320
• Low saturation voltage: VCE (sat) = −0.4 V (max) (IC = −500 mA, IB = −20 mA)
• Suitable for driver stage of small motor
• Complementary to 2SC3265
• Small package
TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) ( Rev : 2003 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL (PCT PROCESS) ( Rev : 1999 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) ( Rev : 2007 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) ( Rev : 2003 )
Toshiba
