2SA1200 数据手册 ( 数据表 ) - Toshiba
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Toshiba
High Voltage Switching Applications
• High voltage: VCEO = −150 V
• High transition frequency: fT = 120 MHz (typ.)
• Small flat package
• PC = 1 to 2 W (mounted on a ceramic substrate)
• Complementary to 2SC2880
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) ( Rev : 2011 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
Toshiba