2SA1111 数据手册 ( 数据表 ) - New Jersey Semiconductor
生产厂家

New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
V(BR)CEO=-150V(Min)
• Good Linearity of hFE
• Complement to Type 2SC2591
APPLICATIONS
• Designed for audio frequency drivers and high power
amplifier applications
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor