Advanced DMOS Technology
   These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the Structure devices are free from thermal runaway and thermally-induced secondary breakdown.

FEATUREs
■ Free from secondary breakdown
■ Low power drive requirement
■ Ease of paralleling
■ Low CISS and fast switching speeds
■ Excellent thermal stability
■ Integral Source-Drain diode
■ High input impedance and high gain
■ Complementary N- and P-channel devices

APPLICATIONs
■ Motor controls
■ Converters
■ Amplifiers
■ Switches
■ Power supply circuits
■ Drivers (relays, hammers, solenoids, lamps,
   memories, displays, bipolar transistors, etc.)