2N6661 数据手册 ( 数据表 ) - TT Electronics.
生产厂家
TT Electronics.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
• VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω
• Fast Switching
• Low Threshold Voltage (Logic Level)
• Low CISS
• Integral Source-Drain Body Diode
• Hermetic Metal TO39 Package
• High Reliability Screening Options Available
N–CHANNEL POWER MOSFET ENHANCEMENT MODE
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE POWER MOSFET
Semelab - > TT Electronics plc
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