2N5782 数据手册 ( 数据表 ) - New Jersey Semiconductor
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New Jersey Semiconductor
Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors
General-Purpose Types for Switching and Linear-Amplifier Applications
FEATUREs:
■ Low saturation voltages
■ Maximum safe-area-of-operation curves
■ High gain at high current
■ High breakdown voltages
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
New Jersey Semiconductor
Silicon N-P-N and P-N-P Epitaxial-Base VERSAWATT Transistors ( Rev : V2 )
New Jersey Semiconductor
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
GE Solid State
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
Intersil
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
General Semiconductor
Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors
Unspecified
P-N-P SILICON TRANSISTORS
New Jersey Semiconductor
Silicon N-P-N Epitaxial-Base High-Power Transistors
GE Solid State
P-N-P EPITAXIAL PLANAR SILICON TRANSISTORS
New Jersey Semiconductor
P-N-P SILICON TRANSISTORS
New Jersey Semiconductor