2N5676 数据手册 ( 数据表 ) - New Jersey Semiconductor
生产厂家

New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.)
• Continuous Collector Current-IC= -2A
• High Current Gain-Bandwidth Product
APPLICATIONS
• Designed for use in high frequency power amplifiers, audio power amplifier and drivers.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor