2N4232A 数据手册 ( 数据表 ) - Boca Semiconductor
生产厂家
Boca Semiconductor
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
..designed for general-purpose power amplifier and switching applications.
FEATURES:
* Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A
* Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A
* LowLeakage Current- lcex =0.1 mA(Max)
MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
Mospec Semiconductor
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
Boca Semiconductor
Medium-Power Complementary Silicon Transistors
ON Semiconductor
MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
New Jersey Semiconductor
MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
Comset Semiconductors
MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
Comset Semiconductors
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
Mospec Semiconductor
COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS
Semelab - > TT Electronics plc
Medium-power complementary Silicon Transistors
Unspecified
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
New Jersey Semiconductor
