2N3771G 数据手册 ( 数据表 ) - ON Semiconductor
生产厂家
ON Semiconductor
These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.
FEATUREs
• Forward Biased Second Breakdown Current Capability
IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771
= 2.5 Adc @ VCE = 60 Vdc − 2N3772
• Pb−Free Packages are Available*
HIGH-POWER NPN SILICON POWER TRANSISTORS
Mospec Semiconductor
HIGH POWER NPN SILICON POWER TRANSISTORS
Boca Semiconductor
High Power NPN Silicon Power Transistors
ON Semiconductor
HIGH-POWER NPN SILICON POWER TRANSISTORS
Mospec Semiconductor
HIGH-POWER NPN SILICON POWER TRANSISTORS
Mospec Semiconductor
HIGH POWER NPN SILICON POWER TRANSISTORS
Mospec Semiconductor
HIGH-POWER NPN SILICON POWER TRANSISTORS
Mospec Semiconductor
HIGH POWER NPN SILICON POWER TRANSISTORS
Boca Semiconductor
HIGH-POWER NPN SILICON TRANSISTORS
Mospec Semiconductor
HIGH-POWER NPN SILICON TRANSISTORS
New Jersey Semiconductor
