零件编号
23NM60ND
产品描述 (功能)
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生产厂家
STMicroelectronics
23NM60ND 数据手册 ( 数据表 ) - STMicroelectronics
STMicroelectronics
Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
FEATUREs
■ The worldwide best RDS(on) * area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
APPLICATION
■ Switching applications
零件编号
产品描述 (功能)
视图
生产厂家
N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
STMicroelectronics
N-channel 600 V, 0.320 Ω, 10 A PowerFLAT™ (8x8) HV MDmesh™ II Power MOSFET ( Rev : 2011 )
STMicroelectronics
N-channel 600 V, 0.320 Ω typ., 10 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package
STMicroelectronics
N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET (with fast diode) D²PAK, I²PAK, TO-220, TO-220FP, TO-247
STMicroelectronics
N-channel 600 V, 0.280 Ω typ., 11 A MDmesh™ DM2 with fast diode Power MOSFET in a PowerFLAT™ 8x8 HV package ( Rev : 2014 )
STMicroelectronics
N-channel 600 V, 0.160 Ω, 19 A PowerFLAT™ 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET
STMicroelectronics
N-channel 600 V, 0.280 Ω typ., 11 A, MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
STMicroelectronics
N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 8x8 HV package ( Rev : 2014 )
STMicroelectronics
N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh™ II Power MOSFET (with fast diode) ( Rev : 2008 )
STMicroelectronics
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