1SS394 数据手册 ( 数据表 ) - Toshiba
生产厂家
Toshiba
High Speed Switching Application
● Small package
● Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Maximum (peak) reverse Voltage VRM 15V
Reverse voltage VR 10V
Maximum (peak) forward current IFM 200mA
Average forward current IO 100mA
Silicon Epitaxial Schottky Barrier Type Diode
Toshiba
Silicon Epitaxial Schottky Barrier Type Diode
KEXIN Industrial
Silicon Epitaxial Schottky Barrier Type Diode
Toshiba
Silicon Epitaxial Schottky Barrier Type Diode
Toshiba
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE ( Rev : 2001 )
KEC
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE
KEC
Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
( Rev : 2007 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
