1SS372 数据手册 ( 数据表 ) - Toshiba
生产厂家
Toshiba
High Speed Switching Application
● Small package
● Low forward voltage: VF = 0.23V (typ.) @IF= 5mA
Silicon Epitaxial Schottky Barrier Type Diode
KEXIN Industrial
Silicon Epitaxial Schottky Barrier Type Diode
Toshiba
Silicon Epitaxial Schottky Barrier Type Diode
Toshiba
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE ( Rev : 2001 )
KEC
Silicon Epitaxial Schottky Barrier Type Diode
Toshiba
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE
KEC
Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
( Rev : 2007 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
