1SS123 数据手册 ( 数据表 ) - NEC => Renesas Technology
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NEC => Renesas Technology
Features
Low capacitance: Ct = 4.0 pF MAX
High speed switching: trr = 9.0 ns MAX.
Wide applications including switching,limitter,clipper.
Double diode configuration assures economical use.
HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE
KEXIN Industrial
HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE
TY Semiconductor
HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE
KEXIN Industrial
HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE
TY Semiconductor
High-speed double diodes
Philips Electronics
High-speed double diodes
Philips Electronics
High-speed double diodes
Philips Electronics
Silicon Epitaxial Planar High-Speed Switching Diodes
ROHM Semiconductor
HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON CATHODE
NEC => Renesas Technology
Double high-speed switching diode
NXP Semiconductors.