1N6820 数据手册 ( 数据表 ) - Microsemi Corporation
生产厂家

Microsemi Corporation
Features
• Tungsten schottky barrier for low VF
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap is anode: 1N6820) and reverse
polarity (strap is cathode: 1N6820R)
LOW REVERSE LEAKAGE SCHOTTKY DIODE
Microsemi Corporation
Low reverse leakage
Rugao Dachang Electronics Co., Ltd
Low reverse leakage
Shanghai Leiditech Electronic Technology Co., Ltd
Low reverse leakage
Rugao Dachang Electronics Co., Ltd
LOW REVERSE LEAKAGE CHARACTERISTICS
Compensated Devices => Microsemi
LOW REVERSE LEAKAGE CHARACTERISTICS
Compensated Devices => Microsemi
ULTRA LOW REVERSE LEAKAGE POWER SCHOTTKY RECTIFIER
( Rev : V2 )
Sensitron
ULTRA LOW REVERSE LEAKAGE POWER SCHOTTKY RECTIFIER
( Rev : RevA )
Sensitron
ULTRA LOW REVERSE LEAKAGE POWER SCHOTTKY RECTIFIER
( Rev : RevA )
Sensitron
ULTRA LOW REVERSE LEAKAGE POWER SCHOTTKY RECTIFIER
( Rev : RevC )
Sensitron