零件编号
1N6816R
产品描述 (功能)
Other PDF
no available.
PDF
page
2 Pages
File Size
59 kB
生产厂家

Microsemi Corporation
Features
• Tungsten schottky barrier
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap-to-anode, 1N6816) and reverse
polarity (strap-to-cathode: 1N6816R)