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1N5817W PDF
1N5817W 数据手册 ( 数据表 ) - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
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DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
FEATURES
• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Schottky Barrier Rectifiers
( Rev : V2 )
Mospec Semiconductor
Schottky Barrier Rectifiers
( Rev : V2 )
Shenzhen Luguang Electronic Technology Co., Ltd
Schottky Barrier Rectifiers
( Rev : V2 )
GOOD-ARK
Schottky Barrier Rectifiers
( Rev : RevB )
Galaxy Semi-Conductor
Schottky Barrier Rectifiers
( Rev : RevB )
Galaxy Semi-Conductor
Schottky Barrier Rectifiers
Leshan Radio Company
Schottky Barrier Rectifiers
GOOD-ARK
Schottky Barrier Rectifiers
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Schottky Barrier Rectifiers
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Schottky Barrier Rectifiers
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD