DESCRIPTION
   The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

FEATURES
* RDS(ON) < 0.1Ω @ VGS=10V, ID=7.8A
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness