155N3LH6 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
FEATUREs
■ 100% avalanche tested
■ Logic level drive
APPLICATIONs
■ Switching applications
■ Automotive
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