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155N3LH6 数据手册 ( 数据表 ) - STMicroelectronics

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零件编号
155N3LH6

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18 Pages

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982.4 kB

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ST-Microelectronics
STMicroelectronics 

Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.


FEATUREs
■ 100% avalanche tested
■ Logic level drive


APPLICATIONs
■ Switching applications
■ Automotive

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零件编号
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生产厂家
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