11N80C3 数据手册 ( 数据表 ) - Infineon Technologies
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Infineon Technologies
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Cool MOS Power Transistor ( Rev : 2003 )
Infineon Technologies
Cool MOS Power Transistor
Infineon Technologies
Cool MOS Power Transistor
Infineon Technologies
Cool MOS Power Transistor ( Rev : 2008 )
Infineon Technologies
Cool MOS Power Transistor
Infineon Technologies
Cool MOS™ Power Transistor
Infineon Technologies
Cool MOS™ Power Transistor ( Rev : 2003 )
Infineon Technologies
Cool MOS™ Power Transistor
Infineon Technologies
Cool MOS™ Power Transistor
Infineon Technologies
Cool MOS™ Power Transistor ( Rev : 2009 )
Infineon Technologies