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10N60KG-TQ2-R(2015) 数据手册 ( 数据表 ) - Unisonic Technologies

10N60K-MT image

零件编号
10N60KG-TQ2-R

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7 Pages

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216.8 kB

生产厂家
UTC
Unisonic Technologies 

DESCRIPTION
The UTC 10N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.


FEATURES
* RDS(ON) < 0.75Ω @ VGS =10V, ID = 5 A
* Low gate charge ( typical 33 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


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生产厂家
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