SS8050 查看數據表（PDF） - Fairchild Semiconductor

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SS8050

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

Power Dissipation

PD

Derate Above 25°C

1

W

8

mW/°C

RθJA

Thermal Resistance, Junction-to-Ambient

125

°C/W

Note:

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Conditions

Min.

BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0

40

BVCEO Collector-Emitter Breakdown Voltage IC = 2 mA, IB = 0

25

BVEBO Emitter-Base Breakdown Voltage

IE = 100 μA, IC = 0

6

ICBO

Collector Cut-Off Current

VCB = 35 V, IE = 0

IEBO

Emitter Cut-Off Current

VEB = 6 V, IC = 0

hFE1

VCE = 1 V, IC = 5 mA

45

hFE2

DC Current Gain

VCE = 1 V, IC = 100 mA 85

hFE3

VCE = 1 V, IC = 800 mA 40

VCE(sat) Collector-Emitter Saturation Voltage IC = 800 mA, IB = 80 mA

VBE(sat) Base-Emitter Saturation Voltage

IC = 800 mA, IB = 80 mA

VBE(on) Base-Emitter On Voltage

VCE = 1 V, IC = 10 mA

Cob

Output Capacitance

VCB = 10 V, IE = 0,

f = 1 MHz

fT

Current Gain Bandwidth Product

VCE = 10 V, IC = 50 mA 100

Typ.

9.0

Max.

100

100

300

0.5

1.2

1

Unit

V

V

V

nA

nA

V

V

V

pF

MHz

hFE Classification

Classification

hFE2

B

85 ~ 160

C

120 ~ 200

D

160 ~ 300

© 2004 Fairchild Semiconductor Corporation

SS8050 Rev. 1.1.0

2

www.fairchildsemi.com

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